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| Silicon Junction FETs (Small Signal) 2SJ164 Silicon P-Channel Junction FET For switching Complementary to 2SK1104 s Features q Low ON-resistance q Low-noise characteristics unit: mm 4.00.2 3.00.2 0.70.1 s Absolute Maximum Ratings (Ta = 25C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings 65 -20 -10 300 150 -55 to +150 Unit V mA mA mW C C 1.27 1.27 1 2 3 2.00.2 marking +0.2 0.45-0.1 2.540.15 1: Source 2: Gate 3: Drain EIAJ: SC-72 New S Type Package s Electrical Characteristics (Ta = 25C) Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Forward transfer admittance Drain to Source ON-resistance Symbol IDSS* IGSS VGDS VGSC | Yfs | RDS(on) Coss Conditions VDS = -10V, VGS = 0 VGS = 30V, VDS = 0 IG = 10A, VDS = 0 VDS = -10V, ID = -10A VDS = -10V, ID = -1mA, f = 1kHz VDS = -10mV, VGS = 0 VDS = -10V, VGS = 0, f = 1MHz 1.8 65 1.5 2.5 300 10 3 3 3.5 min - 0.2 typ max -6 10 Unit mA nA V V mS pF pF pF Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss * IDSS rank classification Runk IDSS (mA) O - 0.2 to -1 P - 0.6 to -1.5 Q -1 to -3 R -2.5 to -6 15.60.5 1 Silicon Junction FETs (Small Signal) PD Ta 200 -4.0 Ta=25C 175 -3.5 -2.5 2SJ164 ID VDS -3.0 VDS=-10V Ta=25C ID VGS Allowable power dissipation PD (mW) Drain current ID (mA) Drain current ID (mA) 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 -3.0 -2.5 -2.0 -1.5 -1.0 VGS=0V -2.0 -1.5 0.2V 0.4V 0.6V -1.0 - 0.5 - 0.5 0 0 -2 -4 -6 -8 0.8V 0 -10 -12 0 1 2 3 4 5 Ambient temperature Ta (C) Drain to source voltage VDS (V) Gate to source voltage VGS (V) | Yfs | VGS 4.0 16 VDS=-10V f=1kHz Ta=25C | Yfs | ID Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 24 Ciss, Coss, Crss VDS VDS=-10V f=1kHz Ta=25C f=1MHz VGS=0 Ta=25C Forward transfer admittance |Yfs| (mS) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 2.0 Forward transfer admittance |Yfs| (mS) 14 12 10 8 6 4 2 0 20 16 Ciss 12 8 4 Coss Crss 0 -1 -3 -10 -30 -100 1.5 1.0 0.5 0 0 -2 -4 -6 -8 -10 -12 Gate to source voltage VGS (V) Drain current ID (mA) Drain to source voltage VDS (V) 2 |
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